2SD2018

$0.21

Description：TRANS NPN DARL 60V 1A TO-126B-A1
Series：-

SKU:fcab29445066 Category: Single Bipolar Transistors Brand: Panasonic Electronic Components

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Product introduction

2SD2018 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN DARL 60V 1A TO-126B-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD2018

Description：TRANS NPN DARL 60V 1A TO-126B-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：1.8V @ 1mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：6500 @ 1A, 10V
Power - Max：5 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126B-A1
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD2018

2SD2018

Single Bipolar Transistors Overview

The Panasonic 2SD2018 is a silicon NPN epitaxial planar type darlington power transistor designed for low-frequency amplification. It features a high forward current transfer ratio (hFE) ranging from 6,500 to 40,000 at IC = 1.0 A and VCE = 10 V. The device incorporates a built-in 60 V Zener diode between the base and collector terminals. Absolute maximum ratings include a collector-emitter voltage (VCEO) of 60 V, a continuous collector current (IC) of 1 A, and a peak collector current (ICP) of 1.5 A. Collector power dissipation is rated at 1.2 W at an ambient temperature of 25°C with a specified heat sink.

Single Bipolar Transistors Feature Summary

High forward current transfer ratio suitable for driver circuits
Integrated 60 V Zener diode between base and collector

Single Bipolar Transistors Applications

Low-frequency amplification
Motor driver circuits
Printer hammer driver circuits

Single Bipolar Transistors Procurement Notes

Verify the specific lifecycle status on the manufacturer's official website before procurement, as this component may be subject to maintenance or discontinuation plans. Confirm that the TO-126B-A1 package dimensions match your PCB footprint requirements. Ensure compliance with RoHS directives if applicable to your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when high gain is required for low-frequency applications without external feedback networks. The integrated Zener diode provides base-collector protection, simplifying circuit design for inductive loads. Consider thermal management requirements, as power dissipation drops significantly above 25°C ambient temperature without a heat sink.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD series of silicon NPN transistors. It utilizes a darlington configuration within a single package to achieve high current gain. The TO-126B-A1 package allows for easy automatic and manual insertion onto printed circuit boards.