2SD21360RA

Description：TRANS NPN 60V 3A MT-3-A1
Series：-

SKU:5ba524977c68 Category: Single Bipolar Transistors Brand: Panasonic Electronic Components

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

2SD21360RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 60V 3A MT-3-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD21360RA

Description：TRANS NPN 60V 3A MT-3-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)：300µA
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1A, 4V
Power - Max：1.5 W
Frequency - Transition：220MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：3-SIP
Supplier Device Package：MT-3-A1
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD21360RA

2SD21360RA

Single Bipolar Transistors Overview

The Panasonic 2SD2136 is a silicon NPN triple diffusion planar type power transistor designed for power amplification applications. It features a high forward current transfer ratio with satisfactory linearity and low collector-emitter saturation voltage. The device supports radial taping supply. Key electrical ratings include a collector-base voltage of 60 V, collector-emitter voltage of 60 V, emitter-base voltage of 6 V, continuous collector current of 3 A, and peak collector current of 5 A. Collector power dissipation is rated at 1.5 W at 25°C ambient temperature. The junction temperature maximum is 150 °C. Transition frequency is 220 MHz.

Single Bipolar Transistors Feature Summary

High forward current transfer ratio (hFE) with satisfactory linearity
Low collector-emitter saturation voltage (VCE(sat))
Radial taping supply capability

Single Bipolar Transistors Applications

Power amplification circuits
General electronic equipment
Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank classification required for the design, as the datasheet defines ranks P, Q, and R based on forward current transfer ratio ranges. Confirm the package marking symbol matches the physical component received. Ensure compliance with absolute maximum ratings during transient states such as power-on or mode-switching to prevent defects.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring an NPN power transistor with a 60 V collector-emitter voltage rating and up to 3 A continuous collector current. Consider the thermal resistance characteristics when designing without a heat sink, as power dissipation drops significantly above 25°C ambient temperature. Verify that the transition frequency meets the signal requirements.

Single Bipolar Transistors Part Context

The 2SD2136 is part of Panasonic's power transistor lineup utilizing triple diffusion planar technology. It is designated as complementary to the 2SB1416 PNP transistor. The product complies with the RoHS Directive (EU 2002/95/EC). Users should consult official sources for the latest lifecycle status, as maintenance or discontinuation information may change.