Single Bipolar Transistors 2SD2150-R-TP product image

2SD2150-R-TP

  • Description:TRANS NPN 20V 3A SOT-89
  • Series:-

SKU:b1362c045d5f Category: Brand:

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2SD2150-R-TP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 20V 3A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD2150-R-TP

  • Description:TRANS NPN 20V 3A SOT-89
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 2A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 100mA, 2V
  • Power - Max:500 mW
  • Frequency - Transition:290MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD2150-R-TP

2SD2150-R-TP

Single Bipolar Transistors Overview

The MCC 2SD2150-R-TP is a small-signal NPN silicon transistor housed in an SOT-89 surface-mount package. It features a maximum collector-emitter voltage of 20 V and a continuous collector current rating of 3.0 A. The device offers a DC current gain (hFE) ranging from 180 to 560, with specific classifications for Rank R (180-390) and Rank S (270-560). Key electrical parameters include a collector-base breakdown voltage of 40 V, a transition frequency of 290 MHz, and a low collector-emitter saturation voltage of 0.5 Vdc at specified currents.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient switching performance
  • Excellent current-to-gain characteristics across operating ranges
  • Epoxy material meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages requiring high current gain
  • Power management applications utilizing surface-mount packaging

Single Bipolar Transistors Procurement Notes

Verify the component authenticity by checking for the 'TP' suffix indicating tape-and-reel packaging and the '-R' designation. Confirm RoHS compliance status as indicated by the manufacturer's ordering information. Ensure procurement channels are authorized distributors to avoid counterfeit parts, as MCC explicitly warns against unauthorized sources. Validate the specific hFE rank (R or S) required for your design before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact SOT-89 footprint is required alongside a 3 A current capability. Consider the specific hFE binning requirements; Rank R provides gains between 180 and 390, while Rank S offers 270 to 560. The low VCE(sat) makes it suitable for applications where minimizing power loss during saturation is critical. Ensure the 20 V VCEO rating aligns with the circuit's maximum voltage swings.

Single Bipolar Transistors Part Context

This part belongs to the Micro Commercial Components plastic-encapsulated transistor family. It is designed as a complementary device to the 2SB1412 PNP transistor, facilitating push-pull configurations. The SOT-89 package allows for automated surface-mount assembly, distinguishing it from through-hole alternatives in the same electrical class.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: 2SCR552P5, 2SCR552PHZG.

2SD2150-R-TP2SD2150-R-TP

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