2SD2150T100S

Single Bipolar Transistors Overview

The 2SD2150T100S is a small signal NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It features a collector-emitter breakdown voltage of 20V and a continuous collector current rating of 3A. The device offers a low collector-emitter saturation voltage, typically 0.2V at 2A collector current with 0.1A base drive. DC current gain (hFE) ranges from 270 to 560 for the 'S' grade variant. Transition frequency reaches 290MHz, and power dissipation is rated at 0.5W in an MPT3 surface-mount package.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• High DC current gain characteristics across operating conditions
• Designed as a complementary component to the 2SB1424 PNP transistor

Single Bipolar Transistors Applications

• General-purpose low-frequency amplification circuits
• Switching applications within consumer electronic devices
• Complementary pairs in audio visual equipment
• Office automation equipment driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning classification required for your design, as the T100 suffix indicates a tape-and-reel packaging format containing 1000 units per basic ordering unit. Confirm that the S-grade gain range aligns with circuit requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a low VCE(sat) NPN transistor is needed to complement a 2SB1424 PNP device. Ensure the 20V collector-emitter voltage rating meets the maximum supply rails. Verify thermal management capabilities for the 0.5W power dissipation limit in the MPT3 package under expected load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2150 series of low-voltage, high-current bipolar junction transistors. It utilizes an epitaxial planar structure on silicon substrate. The MPT3 package provides a compact footprint suitable for automated surface-mount assembly processes in modern electronics manufacturing.

Single Bipolar Transistors Replacement Considerations

ROHM recommends the 2SCR552P5 or 2SCR552PHZG as direct replacements. These alternatives share the same pinout and MPT3 package configuration while offering updated availability status for new designs.

Single Bipolar Transistors FAQ

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 0.2V when measured at a collector current of 2A and a base current of 0.1A.

How is the DC current gain classified?

For the S-type designation, the DC current transfer ratio (hFE) is classified between 270 and 560.

Is this device suitable for radiation-tolerant applications?

No, the product datasheet explicitly states that it is not designed to be radiation tolerant.