2SD2257(CANO,A,Q)

Single Bipolar Transistors Overview

The Toshiba 2SD2257 is an NPN epitaxial silicon transistor designed for high-power switching applications. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 3 A, with a peak pulse current capability of 5 A. The device provides a minimum DC current gain (hFE) of 2000 at collector currents of 1 A or 2 A. Maximum saturation voltage is specified at 1.5 V under standard test conditions. Power dissipation reaches 20 W when mounted on a heat sink at 25°C case temperature. The component utilizes the JEITA SC-67 package.

Single Bipolar Transistors Feature Summary

• High DC current gain ensuring efficient drive requirements
• Low saturation voltage for reduced power loss during conduction
• Capable of handling high collector current loads

Single Bipolar Transistors Applications

• Hammer drive systems
• Pulse motor drive circuits
• General high-power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with the manufacturer or authorized distributor before procurement, as the datasheet indicates this information requires specific product-by-product confirmation. Ensure the ordering suffix matches the required lead-free finish specifications. Confirm that the SC-67 package dimensions align with the target PCB footprint to prevent mechanical assembly issues.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current amplification in switching environments. The high hFE minimizes base drive current requirements. Verify thermal management capabilities, as the 20 W dissipation rating depends on maintaining the case temperature at 25°C. Consider the complementary 2SB1495 PNP transistor if push-pull configurations are necessary for the application design.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba Silicon NPN Epitaxial Type transistor family. It is specifically engineered for robust performance in demanding switching tasks. The device complements the 2SB1495 PNP transistor, allowing for matched pairs in certain circuit topologies. It is intended for general electronics applications such as computer equipment, industrial robotics, and domestic appliances.

Single Bipolar Transistors Replacement Considerations

The official complementary replacement is the 2SB1495 PNP transistor. No other direct substitutes are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (V(BR)CEO) is rated at 100 V.

Does the 2SD2257 include internal protection components?

Yes, the equivalent circuit diagram shows built-in resistors of approximately 4 kΩ and 800 Ω connected between the terminals.

What is the typical turn-on time for this transistor?

The typical turn-on time (ton) is 0.5 μs under the specified test conditions.