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The 2SD2281R is a power NPN bipolar junction transistor manufactured by onsemi. It is designed for high-current switching applications, featuring a maximum collector current of 20A and a collector-emitter breakdown voltage of 30V. The device utilizes a plastic/epoxy encapsulation in a flange mount package with three through-hole terminals. It operates as a single-element silicon transistor with an isolated case connection, suitable for demanding power electronics environments.
Verify the specific suffix 'R' against the manufacturer's official datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the component matches the exact electrical ratings and pinout configuration required for the target circuit design before finalizing procurement orders.
Select this component when a 20A NPN transistor with a 30V rating is required in a flange mount package. Consider its thermal resistance and mounting requirements relative to the application's heat dissipation needs. Verify compatibility with existing PCB or chassis mounting structures compared to alternative packages.
This part belongs to onsemi's discrete power transistor portfolio, specifically engineered for high-power applications. It complements other devices in the series offering similar electrical characteristics but different packaging options, allowing designers to choose based on thermal and mechanical constraints.
Consult the official datasheet for direct pin-to-pin replacements within the same family. Verify that any substitute component meets or exceeds the 20A current and 30V voltage ratings while maintaining compatible thermal performance.