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The Panasonic 2SD2358 is a silicon NPN epitaxial planar transistor designed for low-frequency output amplification. It features a collector-emitter saturation voltage of less than 0.15 V at 500 mA and a forward current transfer ratio ranging from 200 to 800. The device supports a maximum collector current of 1 A with a peak rating of 1.2 A, while maintaining a collector-base breakdown voltage of 10 V. Packaged in the MT-2-A1 radial configuration, it offers a transition frequency of 120 MHz and complies with RoHS directives.
Verify component authenticity through official Panasonic channels or authorized distributors. Confirm that the specific batch matches the MT-2-A1 package dimensions and pinout configuration. Ensure compliance with local import regulations regarding semiconductor components. Review the latest product standards before finalizing procurement to account for any lifecycle changes.
Select this component when low saturation voltage is critical for minimizing power loss in output stages. The high current gain simplifies driver circuit requirements. Verify that the 10 V voltage rating aligns with the target application's operating limits. Consider the radial package constraints during PCB layout planning to ensure adequate clearance and thermal dissipation.
This NPN transistor serves as the complementary pair to the 2SB1538 PNP device within Panasonic's discrete semiconductor lineup. Designed specifically for general-purpose low-frequency applications, it provides balanced performance characteristics suitable for standard consumer electronics and office equipment requiring reliable switching and amplification capabilities.
Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings and physical package dimensions to ensure functional compatibility without redesigning the host circuit board.