2SD2374AP

2SD2374AP

  • Description:TRANS NPN 80V 3A TO-220D-A1
  • Series:-

SKU:78a3abbc01f1 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 80V 3A TO-220D-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max):300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 4V
  • Power - Max:2 W
  • Frequency - Transition:30MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220D-A1
  • Grade:-
  • Qualification:-

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2SD2374AP

Overview

The Panasonic 2SD2374AP is a silicon NPN triple diffusion planar power transistor designed for high-power amplification applications. It features a TO-220D-A1 full-pack package that facilitates direct heat sink mounting with a single screw. The device supports a continuous collector current of 3A and a peak collector current of 5A, with a maximum collector-emitter voltage rating of 80V. It offers a forward current transfer ratio (hFE) ranging from 70 to 250 depending on the rank classification, ensuring satisfactory linearity. The component complies with the RoHS Directive (EU 2002/95/EC).

Feature Summary

  • High forward current transfer ratio hFE which has satisfactory linearity
  • Low collector-emitter saturation voltage VCE(sat)
  • Full-pack package which can be installed to the heat sink with one screw

Applications

  • Power amplification circuits
  • General electronic equipment such as office equipment
  • Communications equipment
  • Measuring instruments
  • Household appliances

Procurement Notes

Verify the specific suffix 'AP' against the official Panasonic Semiconductor datasheet SJD00261BED to confirm if it denotes a specific hFE rank or packaging variation not explicitly detailed in the standard 2SD2374A documentation. Confirm compliance status and lifecycle stage via the manufacturer's official website before procurement.

Selection Notes

Select this component for designs requiring an NPN power transistor with a maximum collector current of 3A and a collector-emitter voltage of 80V. Ensure the thermal management strategy accommodates the 25W dissipation rating at 25°C case temperature. Verify that the required hFE gain falls within the specified Q or P rank classifications for the intended operating conditions.

Part Context

The 2SD2374AP belongs to the Panasonic 2SD2374 series of silicon NPN triple diffusion planar transistors. It is specifically engineered for power amplification tasks. The standard 2SD2374A variant is documented as complementary to the 2SB1548A PNP transistor, allowing for matched push-pull configurations in amplifier stages.

Replacement Considerations

The 2SB1548A is the documented complementary PNP transistor for the 2SD2374A series. For direct replacement, verify electrical parameters including VCEO, IC, and package dimensions against the target application requirements.

2SD2374AP2SD2374AP

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