SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Panasonic 2SD2374AP is a silicon NPN triple diffusion planar power transistor designed for high-power amplification applications. It features a TO-220D-A1 full-pack package that facilitates direct heat sink mounting with a single screw. The device supports a continuous collector current of 3A and a peak collector current of 5A, with a maximum collector-emitter voltage rating of 80V. It offers a forward current transfer ratio (hFE) ranging from 70 to 250 depending on the rank classification, ensuring satisfactory linearity. The component complies with the RoHS Directive (EU 2002/95/EC).
Verify the specific suffix 'AP' against the official Panasonic Semiconductor datasheet SJD00261BED to confirm if it denotes a specific hFE rank or packaging variation not explicitly detailed in the standard 2SD2374A documentation. Confirm compliance status and lifecycle stage via the manufacturer's official website before procurement.
Select this component for designs requiring an NPN power transistor with a maximum collector current of 3A and a collector-emitter voltage of 80V. Ensure the thermal management strategy accommodates the 25W dissipation rating at 25°C case temperature. Verify that the required hFE gain falls within the specified Q or P rank classifications for the intended operating conditions.
The 2SD2374AP belongs to the Panasonic 2SD2374 series of silicon NPN triple diffusion planar transistors. It is specifically engineered for power amplification tasks. The standard 2SD2374A variant is documented as complementary to the 2SB1548A PNP transistor, allowing for matched push-pull configurations in amplifier stages.
The 2SB1548A is the documented complementary PNP transistor for the 2SD2374A series. For direct replacement, verify electrical parameters including VCEO, IC, and package dimensions against the target application requirements.