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Product Detailed Parameters
- Description：TRANS NPN 60V 2A TO-92MOD
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：2000 @ 1A, 2V
- Power - Max：900 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body
- Supplier Device Package：TO-92MOD
- Grade：-
- Qualification：-
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Overview
The Toshiba 2SD2695 is a silicon NPN epitaxial Darlington power transistor housed in a TO-92MOD package. It features a high DC current gain of 2000 (min) at VCE = 2 V and IC = 1 A, alongside a low collector-emitter saturation voltage of 1.5 V (max) under the same conditions. The device supports a maximum collector current of 2 A and a collector-emitter voltage of 60 V. An internal Zener diode connects the collector and base terminals.
Feature Summary
- High DC current gain capability for efficient signal amplification
- Low saturation voltage to minimize power loss during conduction
- Integrated Zener diode between collector and base for protection
Applications
- Micro motor drive circuits
- Hammer drive mechanisms
- General switching applications
- Power amplifier stages
Procurement Notes
Verify RoHS compatibility status through official Toshiba channels, as markings indicate specific environmental compliance variations. Confirm package type matches design requirements. Review absolute maximum ratings carefully to ensure safe operating area limits are respected during application design.
Selection Notes
Select this component when high current gain and low saturation voltage are critical for efficiency. Ensure the required collector current does not exceed 2 A. Consider the integrated Zener diode for potential circuit simplification. Verify thermal management capabilities align with the specified power dissipation limits.
Part Context
This part belongs to Toshiba's discrete semiconductor lineup, specifically designed as a Darlington power transistor. It utilizes an NPN epitaxial structure optimized for robust performance in moderate power handling scenarios. The TO-92MOD package provides a compact form factor suitable for various electronic assemblies.
Replacement Considerations
No direct public substitute part numbers are documented in the provided datasheet. Cross-referencing requires matching electrical characteristics such as Darlington configuration, current rating, and voltage specifications.
FAQ
What is the function of the internal component connected between the collector and base?
A Zener diode is included internally between the collector and base terminals.
What is the minimum DC current gain specified for this transistor?
The minimum DC current gain (hFE) is 2000, measured at VCE = 2 V and IC = 1 A.
What is the maximum collector current rating?
The maximum continuous collector current (IC) is rated at 2 A.
