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The 2SD571(1)-T(ND)-AZ is a bipolar power transistor manufactured by Renesas Electronics Corporation. It is an NPN silicon device designed for high-temperature applications up to 175°C. The component features a collector-emitter voltage (Vceo) of 50V and a DC current gain (hFE) range of 90 to 400. It is supplied in tape and reel packaging with a minimum order quantity of 2000 units. The product is lead-free compliant.
This component is exclusively supported for customers who have already adopted the 2SD571 series. Prospective buyers must verify existing adoption status with Renesas before initiating procurement. Standard ordering parameters include a minimum order quantity of 2000 units and tape-and-reel packaging. Lead times and pricing are not publicly disclosed and require direct engagement with authorized sales channels.
Select this part for applications requiring NPN bipolar transistors capable of operating at elevated temperatures up to 175°C. Ensure the design accommodates the 50V Vceo rating and hFE variability between 90 and 400. Verify that the target system supports the specific package and tape-and-reel delivery format required by the manufacturer.
The 2SD571 series represents Renesas's legacy bipolar power transistor lineup, originally developed by NEC. These components are characterized by their ability to handle high-power conditions and maintain reliability under extreme thermal stress. The series includes variants optimized for low saturation voltage and high-temperature stability, serving as critical elements in industrial and automotive power management systems.
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult Renesas directly for qualified alternatives or cross-reference options based on specific electrical requirements and thermal constraints.