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Product Detailed Parameters
- Description：TRANS NPN 120V 8A TO-3PS
- Series：-
- Mfr：EVVO
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：2.5V @ 500mA, 5A
- Current - Collector Cutoff (Max)：5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：55 @ 1A, 5V
- Power - Max：80 W
- Frequency - Transition：10MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PS
- Grade：-
- Qualification：-
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Overview
The EVVO 2SD718 is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-3PS package. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 8 A. The device has a maximum power dissipation of 80 W and a transition frequency of 10 MHz. DC current gain is specified at a minimum of 55 when tested at 1 A and 5 V. The saturation voltage is limited to 2.5 V under conditions of 500 mA base current and 5 A collector current. Collector cutoff current is rated at a maximum of 5 µA, and the operating junction temperature reaches 150°C.
Feature Summary
- High-power handling capability with 80 W dissipation rating
- Robust current carrying capacity up to 8 A
- Suitable for high-voltage switching applications up to 120 V
Applications
- Power amplifier circuits
- Switching regulators
- Motor control systems
Procurement Notes
Verify the manufacturer designation as EVVO against the component marking. Confirm the TO-3PS package style matches the required thermal management solution. Ensure the RoHS3 compliance status aligns with environmental regulations. Check the specific datasheet for exact hFE binning requirements if precise gain matching is necessary for the design.
Selection Notes
Select this component for designs requiring high current and voltage ratings in a standard through-hole format. Consider the thermal resistance of the TO-3PS package for heat dissipation planning. Verify that the 10 MHz transition frequency meets the speed requirements of the intended application. Compare the 2.5 V saturation voltage against efficiency targets for switching losses.
Part Context
This NPN BJT belongs to the general-purpose high-power transistor category. It utilizes a three-terminal configuration typical of the TO-3PS outline. The device is manufactured by EVVO and is classified as a discrete semiconductor product. It serves as a fundamental active element for amplification and switching tasks in electronic circuits.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the TO-3PS package and equivalent electrical parameters.
