2SD880-Q-BP

Overview

The MCC 2SD880-Q-BP is an NPN silicon power transistor designed for amplifier applications. It features a collector-emitter voltage of 60 V, a collector current of 3 A, and a collector power dissipation of 1.5 W. The device operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a forward current transfer ratio (hFE) of 60 to 120 for the Q classification, a collector-emitter saturation voltage of 1 V at 3 A, and a transition frequency of 3 MHz.

Feature Summary

• NPN silicon construction optimized for power amplifier circuits
• High collector current capability of 3 A with robust thermal performance
• Low saturation voltage for efficient switching and amplification
• RoHS compliant lead-free finish with UL 94 V-0 flammability rating

Applications

• Power amplifier circuits
• General purpose switching applications
• Medium power transistor stages

Procurement Notes

Verify the specific hFE bin by checking the suffix; the 'Q' designation indicates a gain range of 60 to 120. Confirm RoHS compliance via the '-BP' suffix which denotes bulk packaging. Ensure sourcing from authorized distributors to guarantee genuine parts and full traceability, as MCC does not warrant components from unauthorized sources.

Selection Notes

Select this component when a 60 V NPN transistor with 3 A continuous current is required. The Q-class gain band suits moderate amplification needs. Consider the TO-220 package for through-hole mounting and adequate heat sinking. Verify that the 1.5 W power dissipation rating aligns with the thermal management strategy of the target design.

Part Context

This part belongs to the 2SD880 series of NPN silicon power transistors manufactured by Micro Commercial Components. The series offers various gain classifications (Q, Y, GR) to accommodate different circuit requirements while maintaining consistent voltage and current ratings across the family.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Designers should evaluate other NPN power transistors with matching 60 V/3 A ratings and compatible TO-220 packages, ensuring hFE and saturation voltage specifications meet the original design constraints.

FAQ

What is the hFE range for the 2SD880-Q variant?

The Q classification specifies a forward current transfer ratio (hFE) range of 60 to 120 at IC=500mA and VCE=5V.

Is the 2SD880-Q-BP halogen-free?

Standard parts are not inherently halogen-free. Halogen-free versions are available upon request by adding the '-HF' suffix to the part number.

What is the maximum junction temperature?

The maximum operating junction temperature is +150 °C.