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The 2SD882-GR-BP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 30 V and a collector-base breakdown voltage of 40 V. The device supports a maximum collector current of 3.0 A and dissipates up to 1.25 W of power. The DC current gain (hFE) for the GR rank ranges from 200 to 400 at specified test conditions. Transition frequency is rated at a minimum of 50 MHz. Operating and storage junction temperatures span from -55°C to +150°C.
Verify the specific ordering suffix '-BP' indicates bulk packaging containing 1,000 pieces per box. Confirm RoHS compliance status through official MCC documentation or authorized distributors. Ensure procurement channels are authorized to guarantee genuine parts and full traceability. Check for halogen-free availability if required by adding the '-HF' suffix. Validate component authenticity upon receipt to mitigate counterfeiting risks.
Select this component when a high-current NPN transistor with moderate voltage ratings is required. The GR binning ensures a guaranteed hFE range between 200 and 400, suitable for precise gain requirements. Consider the TO-92 package constraints for thermal management in low-power designs. Verify complementary circuit needs against the 2SB772 PNP counterpart. Evaluate transition frequency limits for high-speed switching applications.
This part belongs to the 2SD882 series of NPN medium power transistors produced using planar technology. It is designed for rugged high-performance applications within general-purpose electronics. The series includes various hFE ranking options to accommodate different circuit gain specifications. Micro Commercial Components manufactures these devices with lead-free finishes and RoHS compliance.
The complementary PNP transistor is the 2SB772. Direct replacements must match the 3.0 A current rating, 30 V Vceo, and TO-92 package dimensions. Verify hFE binning compatibility for the specific application requirements.