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The STMicroelectronics 2SD882 is an NPN silicon medium power transistor manufactured using planar technology. It features a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 60 V. The device supports a maximum continuous collector current of 3 A with a power dissipation rating of 12.5 W. Key electrical parameters include a transition frequency (fT) of 100 MHz, a minimum DC current gain (hFE) of 100 at 100 mA, and a collector-emitter saturation voltage of 1.1 V. It operates within a temperature range of -65 °C to +150 °C and is housed in a TO-126-3 (SOT-32) through-hole package.
Verify the specific manufacturer source, as multiple vendors produce this part number. Confirm the package type matches your design requirements, as variations such as TO-252 or SOT-89 exist from other manufacturers. Ensure the component meets RoHS compliance standards if required by your assembly process. Cross-reference datasheets to confirm exact electrical tolerances and pinout configurations before integration.
Select the STMicroelectronics version for verified planar technology ruggedness and guaranteed complementary pairing with the 2SB772 PNP device. Consider the TO-126-3 package for through-hole mounting needs. Evaluate the 1.1 V saturation voltage against thermal management requirements in high-current switching scenarios. Verify that the 3 A current rating aligns with the peak load demands of the target circuit application.
This component belongs to the family of low-voltage NPN medium power transistors designed for general-purpose use. It is specifically engineered to pair with the 2SB772 PNP transistor, facilitating balanced complementary circuits. The planar manufacturing process ensures high reliability and consistent performance across industrial temperature ranges.
The official complementary counterpart is the 2SB772 PNP transistor. Other manufacturers may offer functionally similar parts in different packages, such as TO-252 or SOT-89, but these require verification of pinout compatibility and electrical parameter matching.