SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Panasonic 2SJ0164 is a silicon P-channel junction FET designed for switching circuits. It serves as the complementary device to the 2SK1104 N-channel variant. The component operates with a maximum drain current of -20 mA and a gate-drain voltage rating of 65 V. Key electrical parameters include a typical mutual conductance of 2.5 mS at -1 mA drain current, a maximum gate-source cutoff voltage of 3.5 V, and an on-resistance of 300 Ω. The device features low noise characteristics and complies with the RoHS Directive.
Verify the specific ordering suffix against the manufacturer's documentation to confirm package type and ranking classification. Confirm compliance status with current environmental directives before integration. Check availability status as product lineups may undergo discontinuation or renewal processes. Consult official sales channels for updated supply chain information and lead times.
Select this component when a P-channel JFET with low noise performance is required for signal switching. Ensure the design accommodates the specified gate-source cutoff voltage range of up to 3.5 V. Verify that the circuit can handle the maximum power dissipation of 300 mW within the allowed temperature limits. Consider the complementary relationship with the 2SK1104 for balanced circuit designs.
This part belongs to the Panasonic Silicon Junction FETs (Small Signal) series. It is functionally paired with the 2SK1104 N-channel device to form complementary pairs. The standard designation is 2SJ0164, also referenced as 2SJ164 in some documentation. The device utilizes the NS-A1 package code for surface mounting.
Publicly confirmed substitute part numbers are not available in the provided datasheet. Designers should consult Panasonic sales offices directly for alternative components or updated product standards.