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The Sanyo 2SJ403 is a P-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power switching applications. It features a maximum drain current of 5 A and a minimum drain-source breakdown voltage of 200 V. The device exhibits a maximum drain-source on-resistance of 1.1 Ω and operates in enhancement mode. It is housed in a TO-220AB or TO-220ML flange mount package with three terminals, supporting a maximum operating temperature of 150 °C.
Verify the specific package variant required, as the component is available in both TO-220AB and TO-220ML configurations. Confirm manufacturer documentation from Sanyo Semiconductors to ensure authenticity and accurate technical specifications. Check for any product change notifications or end-of-life status updates prior to procurement.
Select this component for circuits requiring a single P-Channel MOSFET with 200 V blocking capability and 5 A continuous current handling. The 1.1 Ω on-resistance makes it suitable for general-purpose switching where moderate conduction losses are acceptable. Ensure the application supports the TO-220 form factor and flange mounting requirements.
The 2SJ403 belongs to the Sanyo discrete semiconductor transistor category. It is part of a lineup of power field-effect transistors manufactured by Sanyo Semiconductors. This specific model serves as a standalone switching element within larger electronic systems.
No publicly confirmed substitute part numbers are available in the provided data.