2SK1589(0)-T1B-A

$0.27

Description：SMALL SIGNAL N-CHANNEL MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:bbaa6e1576b4 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：SMALL SIGNAL N-CHANNEL MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK1589(0)-T1B-A

Overview

The 2SK1589(0)-T1B-A is a small signal N-channel MOSFET manufactured by Renesas Electronics Corporation. Designed for automotive applications, this single-channel device operates within a temperature range of -55°C to +150°C. It features a drain-source voltage rating of 100V and a continuous drain current of 100mA. The component exhibits a typical input capacitance of 16pF and a gate threshold resistance of 30Ω at 4V. With a power dissipation capacity of 150mW and an operating voltage of 1.8V, it is suitable for low-power switching tasks.

Feature Summary

Automotive-grade reliability for harsh environments
N-channel switching capability
Lead-free construction

Applications

Automotive electronic circuits
Low-power signal switching
Small signal amplification stages

Procurement Notes

Verify the specific ordering suffix and package type against official Renesas documentation to ensure compatibility with your design requirements. Confirm that the component meets all relevant automotive standards and environmental regulations required for your specific application before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring robust N-channel switching in automotive contexts. Ensure the design accommodates its 100V voltage rating and 150mW power dissipation limits. Verify thermal management strategies are adequate for the specified operating temperature range of -55°C to +150°C.

Part Context

This part belongs to Renesas' portfolio of discrete semiconductor devices, specifically focusing on power MOSFETs tailored for automotive use. It represents a solution for reliable switching in vehicle electronics, leveraging Renesas' expertise in automotive-grade silicon manufacturing and quality assurance processes.

Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Do not assume cross-compatibility with other manufacturers without verifying pinout, electrical parameters, and package dimensions.