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Product Detailed Parameters
- Description：MOSFET N-CH 450V 7A TO220F
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：450 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.1Ohm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：720 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F
- Package / Case：TO-220-3 Full Pack
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Overview
The Sanken Electric USA Inc. 2SK2701A is a N-channel MOS FET designed for power switching applications. It features a Drain-Source Voltage (VDSS) of 450 V and a continuous Drain Current (ID) of ±30 A. The device has a maximum Power Dissipation (PD) of 28 W at 25°C case temperature. Electrical characteristics include a typical Gate Threshold Voltage (VTH) of 3.5 V, with a maximum of 5 V. The on-resistance (RDS(ON)) is typically 1.5 Ω at VGS=10 V and ID=15 A. The package type is TO-220F (FM20).
Feature Summary
- High voltage capability rated at 450 V drain-source breakdown.
- Capable of handling continuous current up to 30 A.
- Optimized for low on-state resistance to reduce conduction losses.
Applications
- Power supply circuits requiring high voltage isolation.
- Motor drive systems utilizing N-channel MOSFETs.
- General purpose power switching applications.
Procurement Notes
Verify the specific ordering suffix and package variant against the official datasheet before procurement. Confirm thermal management requirements align with the specified power dissipation limits. Ensure compatibility with existing PCB footprints for the TO-220F package. Check for any RoHS compliance documentation if required by your manufacturing standards.
Selection Notes
Select this component when a 450 V rating and 30 A continuous current capacity are required in a TO-220F package. Consider the RDS(ON) value of 1.5 Ω for efficiency calculations under load. Verify that the gate threshold voltage range suits the driving circuit logic levels. Evaluate thermal performance based on the 28 W dissipation limit at the specified case temperature.
Part Context
This part belongs to the Sanken Electric USA Inc. lineup of discrete transistors, specifically within the MOS FET category. It is engineered for robust performance in power electronics. The TO-220F package provides a balance of electrical performance and mechanical mounting options suitable for various industrial and consumer electronic designs.
Replacement Considerations
Consult the manufacturer's cross-reference list or equivalent product guides for verified substitutes. Ensure any replacement matches the 450 V VDSS, 30 A ID, and TO-220F package dimensions. Verify that electrical parameters such as RDS(ON) and VTH fall within acceptable tolerances for the application.
