2SK2962,T6WNLF(M

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:3810da8199e7 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK2962,T6WNLF(M

Overview

The Toshiba Semiconductor and Storage 2SK2962 is a silicon N-channel MOS field-effect transistor utilizing L²-π-MOSV technology. It features a TO-92MOD package with a drain-source voltage rating of 100 V and a continuous DC drain current of 1 A. The device exhibits a typical drain-source ON resistance of 0.5 Ω at VGS = 4 V and 0.7 Ω at VGS = 10 V, both measured at ID = 0.5 A. It supports a gate drive voltage of 4 V and has a forward transfer admittance of 1.2 S. Thermal resistance from channel to ambient is 138 °C/W.

Feature Summary

Utilizes L²-π-MOSV technology for enhanced performance
Capable of operation with a 4-V gate drive signal
Features low drain-source ON resistance for efficient switching
Supports high forward transfer admittance

Applications

Chopper Regulator circuits
DC-DC Converter designs
Motor Drive systems

Procurement Notes

Verify the specific ordering suffix (e.g., T6WNLF) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as markings indicate variations. Confirm that the component meets the intended application's reliability requirements by consulting the Toshiba Semiconductor Reliability Handbook regarding derating concepts and methods under heavy loads.

Selection Notes

Select this component for applications requiring a 100 V breakdown voltage and a 1 A continuous current capability in a compact TO-92MOD package. Ensure the design accommodates the thermal resistance of 138 °C/W to maintain the channel temperature below 150°C. Verify that the driving circuit can provide the necessary gate voltage levels to achieve the specified low ON resistance characteristics.

Part Context

The 2SK2962 belongs to the family of silicon N-channel MOS type field effect transistors manufactured by Toshiba Semiconductor and Storage. It is designed specifically for general electronics applications including computers, office equipment, and industrial robots. The device is not intended for use in nuclear facilities, aerospace, medical equipment, or other safety-critical systems without explicit permission.