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The Renesas 2SK3055-AZ is a single N-channel power MOSFET designed for high-current switching applications. It features a maximum drain current of 25A and a breakdown voltage of 60V. The device exhibits a low on-resistance of 0.05 ohms, ensuring efficient power handling in industrial and consumer electronic circuits.
Verify the specific suffix designation against official Renesas documentation to confirm exact electrical tolerances and package variations. Ensure compatibility with intended thermal management requirements and verify that lead compliance status aligns with regional regulatory mandates for the target deployment market.
Select this component for designs requiring robust N-channel switching capabilities at moderate voltage levels. Evaluate the 25A continuous current rating against peak load demands. Confirm that the 0.05 ohm on-resistance meets efficiency targets for the specific power supply topology being implemented.
This part belongs to the Renesas single FET product line, specifically categorized as a switching N-channel MOSFET. It serves as a discrete power semiconductor solution within the broader portfolio of analog and power management components offered by the manufacturer for general-purpose electronic systems.
Consult official substitution guides for equivalent N-channel MOSFETs with matching 60V ratings and comparable current handling capabilities. Verify pinout compatibility before integrating alternative devices into existing board layouts.
Yes, the component is specified as lead-free.
The maximum drain current is 25 amperes.