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Product Detailed Parameters
- Description：MOSFET N-CH 60V 30A TO220ML
- Series：-
- Mfr：onsemi
- Package：Bag
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1780 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 25W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220ML
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi 2SK3703 is an N-channel Power MOSFET designed for low-voltage drive applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 115 mA. The device operates in enhancement mode and is housed in a surface-mount package with a power dissipation rating of 25 W.
Feature Summary
- N-channel enhancement mode operation
- Low voltage drive series capability
- Surface mount packaging
Applications
- Low voltage switching circuits
- Power management modules
- General purpose amplification
Procurement Notes
Verify the specific suffix, such as -1E, against official documentation to confirm exact electrical characteristics and packaging details. Confirm availability status as distribution data may indicate end-of-life or discontinuation for certain variants. Ensure the selected component matches the required thermal and electrical specifications for the target application.
Selection Notes
Select this component for applications requiring an N-channel MOSFET with a 60 V breakdown voltage and moderate current handling capabilities. Consider the 25 W power dissipation rating when designing thermal management solutions. Verify compatibility with low-voltage drive signals if utilizing the specific drive series variant.
Part Context
The 2SK3703 belongs to onsemi's discrete semiconductor portfolio, specifically within the Power MOSFET category. It is engineered for efficiency in low-voltage environments. The part is often referenced alongside similar N-channel devices in power switching and signal modulation contexts.
Replacement Considerations
Public sources identify FDPF320N06L as a potential substitute for the 2SK3703-1E variant. Verify pinout compatibility and electrical parameter alignment before implementation.
