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The Sanyo 2SK3720-5-TB-E is an N-channel silicon MOSFET designed for FM tuner and VHF-band amplifier applications. It operates with a drain-to-source voltage of 15V and a continuous drain current of 30mA, dissipating up to 200mW at 25°C. The device features low noise characteristics and high power gain. Electrical specifications include a zero-gate voltage drain current (IDSS) range of 6 to 10 mA for the 'Rank 5' classification, a cutoff voltage of -2.2V, and a forward transfer admittance of 16 mS at 1kHz. Input capacitance is 2.4 pF, while reverse transfer capacitance is 0.035 pF at 1MHz.
Verify the specific ordering suffix '-5-TB-E' against the manufacturer's official documentation to confirm the IDSS binning rank and packaging type. Ensure that the component is sourced from authorized channels to guarantee authenticity and adherence to the specified electrical parameters provided in the datasheet.
Select this component when designing circuits requiring low-noise amplification in the VHF spectrum. Consider the Rank 5 IDSS specification (6 to 10 mA) for biasing requirements. Evaluate the thermal management capabilities, as the maximum allowable power dissipation is limited to 200mW at 25°C ambient temperature.
This part belongs to the Sanyo 2SK3720 series of N-channel silicon MOSFETs. The base model is engineered specifically for radio frequency applications, offering a balance of low noise figure and high power gain. The device utilizes a CP package configuration for surface mounting.
Consult the manufacturer's official cross-reference list for verified substitutes. Generic replacements may not match the specific noise figure or capacitance values required for VHF tuner applications.
For the Rank 5 classification, the zero-gate voltage drain current (IDSS) ranges from 6 to 10 mA.
The absolute maximum rating for gate-to-source voltage (VGS) is ±5V.
The small reverse transfer capacitance (Crss) of 0.035 pF helps reduce internal feedback, which is critical for stability in high-frequency amplifier designs.