2SK3720-5-TB-E

2SK3720-5-TB-E

$0.17
  • Description:RF MOSFET 10V 3CP
  • Series:-

SKU:20433b6e9a70 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET 10V 3CP
  • Series:-
  • Mfr:Sanyo
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Frequency:100MHz
  • Gain:35dB
  • Voltage - Test:10 V
  • Current Rating (Amps):30mA
  • Noise Figure:2dB
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:15 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:3-CP
  • Configuration:N-Channel

Download product information

2SK3720-5-TB-E

Overview

The Sanyo 2SK3720-5-TB-E is an N-channel silicon MOSFET designed for FM tuner and VHF-band amplifier applications. It operates with a drain-to-source voltage of 15V and a continuous drain current of 30mA, dissipating up to 200mW at 25°C. The device features low noise characteristics and high power gain. Electrical specifications include a zero-gate voltage drain current (IDSS) range of 6 to 10 mA for the 'Rank 5' classification, a cutoff voltage of -2.2V, and a forward transfer admittance of 16 mS at 1kHz. Input capacitance is 2.4 pF, while reverse transfer capacitance is 0.035 pF at 1MHz.

Feature Summary

  • Low noise performance suitable for sensitive RF front-end circuits
  • High power gain optimized for VHF-band amplification
  • Small reverse transfer capacitance to minimize signal feedback

Applications

  • FM Tuner circuits
  • VHF-Band Amplifier stages

Procurement Notes

Verify the specific ordering suffix '-5-TB-E' against the manufacturer's official documentation to confirm the IDSS binning rank and packaging type. Ensure that the component is sourced from authorized channels to guarantee authenticity and adherence to the specified electrical parameters provided in the datasheet.

Selection Notes

Select this component when designing circuits requiring low-noise amplification in the VHF spectrum. Consider the Rank 5 IDSS specification (6 to 10 mA) for biasing requirements. Evaluate the thermal management capabilities, as the maximum allowable power dissipation is limited to 200mW at 25°C ambient temperature.

Part Context

This part belongs to the Sanyo 2SK3720 series of N-channel silicon MOSFETs. The base model is engineered specifically for radio frequency applications, offering a balance of low noise figure and high power gain. The device utilizes a CP package configuration for surface mounting.

Replacement Considerations

Consult the manufacturer's official cross-reference list for verified substitutes. Generic replacements may not match the specific noise figure or capacitance values required for VHF tuner applications.

FAQ

What is the IDSS range for the 2SK3720-5 variant?

For the Rank 5 classification, the zero-gate voltage drain current (IDSS) ranges from 6 to 10 mA.

What are the absolute maximum ratings for gate-to-source voltage?

The absolute maximum rating for gate-to-source voltage (VGS) is ±5V.

How does the reverse transfer capacitance affect performance?

The small reverse transfer capacitance (Crss) of 0.035 pF helps reduce internal feedback, which is critical for stability in high-frequency amplifier designs.

2SK3720-5-TB-E2SK3720-5-TB-E
$0.17
Buy Now