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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3755-AZ is an N-channel power MOSFET designed for high current switching applications. It features a super low on-state resistance of 12 mΩ maximum at VGS = 10 V and ID = 23 A, and 18 mΩ maximum at VGS = 4.5 V and ID = 23 A. The device has a drain-to-source voltage rating of 40 V and a continuous drain current capability of 45 A at TC = 25°C. It includes a built-in gate protection diode and exhibits a typical input capacitance of 1200 pF.
Feature Summary
- Super low on-state resistance for efficient power handling
- Built-in gate protection diode for enhanced reliability
- Low input capacitance for fast switching performance
Applications
- High current switching applications
- Power supply circuits
- Motor control systems
Procurement Notes
Verify the specific ordering suffix to confirm package type and compliance status. Confirm the latest quality grade classification with Renesas Electronics sales offices before procurement. Ensure application requirements align with the Standard quality grade specifications provided in the datasheet.
Selection Notes
Select this component for designs requiring robust high-current switching capabilities within a 40 V system. Consider the thermal dissipation characteristics and case temperature ratings when designing heat management solutions. Verify that the gate drive voltage meets the requirements for optimal on-state resistance performance.
Part Context
This part belongs to the Renesas (formerly NEC Electronics) discrete semiconductor transistor family. It is an N-channel MOS Field Effect Transistor manufactured using metal-oxide semiconductor technology. The product line focuses on providing reliable switching solutions for various electronic equipment applications.
Replacement Considerations
Consult official Renesas documentation for verified substitute part numbers. Cross-reference electrical parameters such as VDS, ID, and RDS(on) carefully. Ensure package compatibility and thermal characteristics match the original design requirements.
