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Product Detailed Parameters
- Description：JFET N-CH 10MA SMCP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：600 µA @ 10 V
- Current Drain (Id) - Max：10 mA
- Voltage - Cutoff (VGS off) @ Id：180 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 10V
- Resistance - RDS(On)：200 Ohms
- Power - Max：100 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SMCP
- Grade：-
- Qualification：-
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Overview
The onsemi 2SK3796-2-TL-E is an N-channel JFET in the SMCP (SOT-416) package. It features a Drain-to-Source Voltage of 30 V and a Gate-to-Drain Breakdown Voltage of -30 V. The device has a typical Forward Transfer Admittance of 6.5 mS at 1 kHz. Input Capacitance is 4 pF, while Reverse Transfer Capacitance is 1.1 pF. The Gate Cutoff Current is limited to 1.0 nA maximum. For the -2 suffix, the Drain Current IDSS ranges from 0.6 mA to 1.5 mA. The Static Drain-to-Source On-State Resistance is 200 Ω. Allowable Power Dissipation is 100 mW, with a Junction Temperature rating up to 150 °C.
Feature Summary
- Low input capacitance for high-frequency signal integrity
- Minimal gate leakage current for precision applications
- Small physical footprint suitable for space-constrained designs
Applications
- Low-frequency general-purpose amplifiers
- Impedance conversion circuits
- Analog switches
Procurement Notes
Verify the ordering suffix matches the required IDSS binning category. Confirm the tape and reel quantity aligns with production requirements. Check RoHS compliance status before finalizing procurement documentation. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability.
Selection Notes
Select this part when low input capacitance and small gate leakage are critical. Compare IDSS bins to match circuit biasing needs. Verify that the 30 V breakdown voltage meets system voltage headroom requirements. Consider the SMCP package dimensions for PCB layout constraints.
Part Context
This component belongs to the 2SK3796 series of N-channel JFETs. Variants include the -3 and -4 suffixes, which differ primarily in their IDSS classification ranges. All variants share identical electrical characteristics regarding breakdown voltages, capacitances, and transconductance.
Replacement Considerations
Direct replacements must match the SMCP/SOT-416 package and N-channel JFET configuration. Verify that substitute parts meet or exceed the 30 V breakdown voltage and 6.5 mS transconductance specifications. Cross-reference IDSS ranges to ensure proper circuit operation without redesign.
