2SK3824

$2.09

Description：MOSFET N-CH 60V 60A TO220
Series：-
Mfr：onsemi
Package：Bulk

SKU:45bfc6bb8915 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 60A TO220
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3500 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.75W (Ta), 60W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

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2SK3824

Overview

The 2SK3824 is an N-Channel Silicon MOSFET designed as a general-purpose switching device. It features low ON-resistance and ultrahigh-speed switching capabilities with a 4V drive option. The component guarantees avalanche resistance for robust operation. Key electrical ratings include a Drain-to-Source Voltage of 60 V, a DC Drain Current of 60 A, and a pulse Drain Current of 240 A. Static Drain-to-Source On-State Resistance is specified at 15 mΩ (max) at VGS=10V and 22 mΩ (max) at VGS=4V. Total Gate Charge is 67 nC. The device operates within a channel temperature range up to 150 °C.

Feature Summary

Low ON-resistance for efficient power handling
Ultrahigh-speed switching performance
Supports 4V gate drive configurations
Guaranteed avalanche resistance capability

Applications

Motor drive systems
DC / DC converters

Procurement Notes

Verify the manufacturer origin carefully, as the datasheet identifies SANYO Electric Co., Ltd. while market listings may reference onsemi. Confirm the specific ordering number ENN8230 matches your supply chain requirements. Ensure the TO-220 package variant aligns with your thermal management design. Validate that the absolute maximum ratings meet your circuit's peak voltage and current demands before finalizing procurement.

Selection Notes

Select this component for applications requiring fast switching speeds and low conduction losses in general-purpose environments. The 4V drive feature offers flexibility for logic-level interfacing. Consider the 60 V breakdown voltage and 60 A continuous current rating when sizing for load requirements. The guaranteed avalanche energy makes it suitable for inductive loads where transient spikes are expected.

Part Context

This part is classified as an N-Channel Silicon MOSFET within the general-purpose switching device category. It utilizes a TO-220 through-hole package. The device is manufactured by SANYO Electric Co., Ltd. under ordering number ENN8230. It is distinct from intelligent power modules or gate drivers, serving specifically as a discrete semiconductor switch.