SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2SK3856-5-TB-E is an N-channel MOSFET designed for low-voltage applications. It features a maximum drain-source voltage (VDS) of 15 V and a continuous drain current (ID) of 30 mA. The device utilizes a SC-59-3 (SOT-363) surface-mount package, ensuring compact integration in space-constrained designs. Key electrical characteristics include a gate-source threshold voltage (VGS(th)) typically ranging from 0.4 V to 1.0 V at VDS = VGS and ID = 1 mA. The component operates within a junction temperature range of -55°C to +150°C and dissipates up to 200 mW of power.
Verify the specific suffix and tape-and-reel configuration against the official datasheet before ordering. Confirm RoHS compliance status and lead times with authorized distributors, as availability may vary by region. Ensure the procurement channel is an authorized partner to guarantee component authenticity and traceability.
Select this component for applications requiring small form factor N-channel switching with low voltage operation. Compare the 30 mA current rating and 15 V breakdown voltage against circuit requirements. Consider the SC-59-3 package dimensions for board space constraints and verify thermal dissipation capabilities under expected load conditions.
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the single FET and MOSFET category. It serves as a compact switching solution for low-power analog and digital circuits. The SC-59-3 package is standard for space-sensitive consumer and industrial electronics requiring reliable N-channel performance.
Consult official cross-reference guides or manufacturer substitution lists for verified equivalents. Ensure any replacement matches the 15 V VDS, 30 mA ID, and SC-59-3 package footprint. Verify pinout compatibility and electrical parameters before implementation.