2STF2280

Single Bipolar Transistors Overview

The 2STF2280 is a low voltage high performance PNP power transistor manufactured using PB-HCD technology. It features a collector-emitter voltage of -80 V, a continuous collector current of 2 A, and a total dissipation of 1.4 W at 25°C. The device exhibits a typical DC current gain (hFE) ranging from 80 to 300 depending on the operating point, with a transition frequency of 50 MHz. It is housed in a SOT-89 package.

Single Bipolar Transistors Feature Summary

• Utilizes PB-HCD technology for exceptional high gain and very low saturation voltage
• Fast switching speed suitable for demanding applications
• High current gain characteristic across various operating conditions

Single Bipolar Transistors Applications

• DC-DC converter circuits
• Voltage regulation systems
• General purpose switching equipment

Single Bipolar Transistors Procurement Notes

Verify the component status as preliminary data subject to change without notice. Confirm the specific packaging configuration matches the requirement, noting that the datasheet indicates tape and reel packaging for this order code. Ensure compliance with environmental specifications by checking the ECOPACK grade available for the specific batch.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a PNP transistor with high current handling capabilities up to 2 A and fast switching characteristics. Consider the thermal resistance of 89 °C/W when designing heat dissipation strategies. Evaluate the saturation voltage requirements against the specified limits at target load currents to ensure efficient operation within the circuit design constraints.

Single Bipolar Transistors Part Context

This device belongs to STMicroelectronics' portfolio of low voltage bipolar power transistors. It utilizes the PB-HCD (power bipolar high current density) technology, which distinguishes it from standard bipolar devices by offering superior gain and lower saturation voltages. This places it in a category optimized for high-performance switching applications where efficiency and speed are critical.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not provided in the source documentation. Verify pinout compatibility and electrical ratings before considering any alternative components from other manufacturers or different series within the same product line.

Single Bipolar Transistors FAQ

What technology is used to manufacture the 2STF2280?

The device is manufactured using PB-HCD (power bipolar high current density) technology.

What is the maximum collector-emitter voltage rating?

The absolute maximum collector-emitter voltage (VCEO) is -80 V.

What is the transition frequency of the transistor?

The transition frequency (fT) is 50 MHz under test conditions of IC = -0.1 A and VCE = -10 V.