2STL1360

Single Bipolar Transistors Overview

The 2STL1360 is a low voltage fast-switching NPN power transistor manufactured using PB-HCD technology. It features very low collector-emitter saturation voltage and high current gain. Key electrical ratings include a collector-base voltage of 80 V, collector-emitter voltage of 60 V, and emitter-base voltage of 6 V. The device supports a continuous collector current of 3 A and a peak collector current of 5 A. Total dissipation is rated at 1.2 W at 25 °C. Thermal resistance junction-to-ambient is 104 °C/W. Maximum operating junction temperature is 150 °C.

Single Bipolar Transistors Feature Summary

• Very low collector-emitter saturation voltage for reduced conduction losses
• High current gain characteristic for efficient driving requirements
• Fast-switching speed suitable for high-frequency applications

Single Bipolar Transistors Applications

• Emergency lighting
• LED drivers
• Voltage regulation
• Relay drive circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code matches the required package variant. The 2STL1360 corresponds to the TO-92L package in bag packaging. Confirm environmental compliance grades such as ECOPACK if required by the design specifications. Ensure the component marking L1360 aligns with the physical device received during quality inspection.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and high gain are critical for efficiency. The TO-92L package offers surface mounting capabilities compared to through-hole alternatives. Consider the 60 V collector-emitter rating for low voltage switching applications. Evaluate thermal management requirements based on the 104 °C/W junction-to-ambient resistance.

Single Bipolar Transistors Part Context

This device belongs to the STPOWER family of power bipolar transistors. It utilizes PB-HCD technology to achieve high performance in a compact form factor. The product line includes complementary PNP variants and other voltage ratings within the low voltage category. It is designed for energy-efficient designs requiring reliable switching performance.

Single Bipolar Transistors Replacement Considerations

The 2STX1360 serves as a direct functional substitute with identical electrical characteristics. The primary difference lies in the package type, with the 2STX1360 utilizing the standard TO-92 through-hole package instead of the TO-92L surface mount version.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2STL1360?

The maximum collector-emitter voltage (VCEO) with base open is 60 V.

What technology is used to manufacture the 2STL1360?

The device is manufactured using PB-HCD (Power Bipolar High Current Density) technology.

What is the typical DC current gain at IC = 1 A?

The typical DC current gain (hFE) is 400 when the collector current is 1 A and VCE is 2 V.