3SK293(TE85L,F)

RF FETs, MOSFETs Overview

The Toshiba Semiconductor and Storage 3SK293(TE85L,F) is an N-Channel Dual Gate MOSFET designed for high-frequency applications. It operates at a frequency of 800MHz with a gain of 22dB. The device features a test voltage of 6V and supports a maximum current of 0.03A with a power rating of 0.1W. It is housed in the SOT-343 (USQ) surface-mount package, suitable for UHF high-frequency amplifier circuits.

RF FETs, MOSFETs Feature Summary

• Dual gate configuration optimized for RF performance
• High-frequency operation capability up to 800MHz
• Surface-mount USQ package design

RF FETs, MOSFETs Applications

• UHF high-frequency amplifier circuits
• RF signal processing modules
• High-frequency communication equipment

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the official Toshiba datasheet to ensure compatibility with the required RF specifications. Confirm that the component status aligns with project requirements, as availability may vary. Cross-reference the pinout and electrical characteristics with the latest manufacturer documentation before integration into the final design.

RF FETs, MOSFETs Selection Notes

Select this component when a dual-gate N-Channel MOSFET is required for UHF amplification tasks. Ensure the 0.1W power dissipation and 0.03A current limits meet the circuit demands. The 800MHz frequency specification makes it suitable for applications requiring stable RF gain without excessive noise.

RF FETs, MOSFETs Part Context

This part belongs to Toshiba's discrete semiconductor portfolio, specifically within the RF MOSFET category. It utilizes advanced silicon technology to deliver consistent performance in high-frequency environments. The dual-gate structure allows for improved isolation and gain control compared to standard single-gate configurations.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided data.