50C02CH-TL-E

Single Bipolar Transistors Overview

The onsemi 50C02CH-TL-E is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 500 mA. The device operates with a transition frequency of 500 MHz and dissipates up to 700 mW of power. Key electrical characteristics include a minimum DC current gain of 300 at 10 mA and 2 V, and a maximum collector-base voltage of 60 V. It utilizes the 3-CPH package, equivalent to SOT-23-3, and supports a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• High-frequency performance optimized for signal processing and switching tasks
• Low saturation voltage capability for efficient power management
• Compact surface-mount footprint suitable for space-constrained designs

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Small-signal amplification stages
• Driver circuits for low-power loads

Single Bipolar Transistors Procurement Notes

Verify the complete part number including the suffix against official manufacturer documentation to ensure correct packaging and material specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference datasheet revisions to align with current manufacturing standards and environmental regulations.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required in a compact SOT-23 form factor. Ensure the operating voltage remains below the 50 V collector-emitter limit and that thermal management accommodates the 700 mW power dissipation. Verify that the 500 MHz transition frequency meets the circuit's speed requirements.

Single Bipolar Transistors Part Context

This component belongs to the 50C02 series of small-signal NPN transistors from onsemi. It shares the same base die and electrical characteristics as variants such as the 50A02CH-TL-E, which is the complementary PNP type. The CPH package designation indicates a specific lead frame and molding compound configuration used by the manufacturer for these surface-mount devices.

Single Bipolar Transistors Replacement Considerations

Direct pin-compatible substitutes within the same family include the 50A02CH-TL-E (PNP counterpart). Other generic SOT-23 NPN transitors may serve as functional replacements if their voltage, current, and gain parameters meet or exceed the original specifications.

Single Bipolar Transistors FAQ

What is the maximum junction temperature for the 50C02CH-TL-E?

The maximum operating junction temperature is 150°C.

Does this transistor support RoHS 3 compliance?

Yes, the component is compliant with RoHS 3 regulations.

What is the typical DC current gain at low currents?

The minimum DC current gain is specified as 300 at a collector current of 10 mA and Vce of 2 V.