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5962-9474901MEA is listed in the Bipolar RF Transistors range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is NPN TRANSISTOR ARRAY. Review the specifications below when checking this part for your BOM.
Bipolar RF Transistors specifications for 5962-9474901MEA
- Description：NPN TRANSISTOR ARRAY
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Bipolar RF Transistors datasheet and documents for 5962-9474901MEA
Bipolar RF Transistors Overview
The 5962-9474901MEA is a dual-marked ultra-high frequency NPN bipolar RF transistor array manufactured by Harris Corporation, now part of L3Harris Technologies. This component is designed for high-frequency applications and features a typical DC current gain (hFE) range between 20 and 50, which supports biasing stability in RF circuits. The device is classified as a bipolar RF transistor and serves as an alternative to the HFA3127MJ/883.
Bipolar RF Transistors Feature Summary
- Dual-marked ultra-high frequency NPN bipolar RF transistor array
- Typical hFE range between 20 and 50 for biasing stability
Bipolar RF Transistors Applications
- High-frequency RF circuit design
- Ultra-high frequency signal processing
- Government and commercial communications systems
Bipolar RF Transistors Procurement Notes
Verify manufacturer documentation to confirm that the dual marking corresponds to the HFA3127MJ/883 equivalent. Ensure compatibility with specific RF circuit requirements given the defined hFE range. Confirm that the component meets all necessary military or industrial standards associated with the 5962 prefix designation before integration into final assemblies.
Bipolar RF Transistors Selection Notes
Select this component when an ultra-high frequency NPN bipolar RF transistor array is required. Consider the specified hFE range of 20 to 50 for appropriate biasing network design. Verify that the dual-marked nature aligns with existing supply chain preferences or technical specifications requiring equivalence to the HFA3127MJ/883 part number.
Bipolar RF Transistors Part Context
This component is produced by Harris Corporation, an international communications technology company serving government and commercial markets. The product line includes assured communications products and systems. The 5962 prefix indicates a military-standardized electronic component format, often associated with high-reliability applications in defense and aerospace sectors.
Bipolar RF Transistors Replacement Considerations
The 5962-9474901MEA is explicitly dual-marked as the HFA3127MJ/883. Use this part number as a confirmed substitute or equivalent reference when sourcing replacements or verifying technical specifications.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
