6585_2N4209

Single Bipolar Transistors Overview

The onsemi 2N4209 is an RF small signal bipolar transistor constructed from silicon with a PNP configuration. It features a single element design housed in a TO-18 metal cylindrical package. The device supports a maximum collector current of 0.05 A and a collector-emitter voltage rating of 15 V. Key electrical characteristics include a minimum DC current gain (hFE) of 50 and a maximum power dissipation of 0.3 W. The component operates at temperatures up to 200 °C and exhibits a base-collector capacitance of 3 pF.

Single Bipolar Transistors Feature Summary

• Utilizes a robust metal cylindrical TO-18 package for reliable performance in high-frequency applications.
• Engineered as a PNP silicon transistor optimized for RF small signal processing tasks.
• Capable of operating at elevated temperatures up to 200 °C for demanding environments.

Single Bipolar Transistors Applications

• RF small signal amplification circuits
• General-purpose switching applications requiring low current handling
• High-temperature electronic assemblies

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as the 2N4209 designation is a generic JEDEC type number utilized by multiple semiconductor producers. Confirm that the delivered component matches the required TO-18 metal can package and PNP polarity. Ensure the supplier provides documentation confirming the 0.05 A current rating and 15 V voltage limits. Check for compliance with relevant environmental standards if applicable to your assembly process.

Single Bipolar Transistors Selection Notes

Select this component when a ruggedized metal package is required for RF or high-temperature operation. The TO-18 form factor offers superior thermal and mechanical stability compared to plastic packages. Consider the 0.05 A current limit and 15 V breakdown voltage when designing the circuit. This PNP transistor is suitable for low-power signal conditioning where reliability under thermal stress is critical.

Single Bipolar Transistors Part Context

The 2N4209 belongs to the family of general-purpose RF small signal transistors. It shares functional similarities with other PNP devices like the 2N4208 but is distinguished by its specific TO-18 metal can packaging. This package style is often preferred in aerospace, military, and high-reliability industrial applications due to its hermetic sealing capabilities and durability against harsh environmental conditions.

Single Bipolar Transistors Replacement Considerations

The 2N4208 is a documented substitute part number offering identical electrical specifications. Verify pinout compatibility and package dimensions before substitution. Other generic PNP transistors may require circuit adjustments due to differences in hFE or capacitance values.