Bipolar RF Transistors 66099 product image

66099

  • Description:RF POWER TRANSISTOR
  • Series:-

SKU:5fa2bff730d7 Category: Brand:

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66099 is listed in the Bipolar RF Transistors range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is RF POWER TRANSISTOR. Review the specifications below when checking this part for your BOM.

Bipolar RF Transistors specifications for 66099

  • Description:RF POWER TRANSISTOR
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Bipolar RF Transistors datasheet and documents for 66099

66099

Bipolar RF Transistors Overview

The Microsemi Corporation model 66099 is a component identified within the provided documentation as part of the SGM66099 series, specifically described as an ultra-low quiescent current synchronous boost converter. It operates with an input voltage range from 0.9V to 5.2V, suitable for lithium-manganese, nickel-metal hydride, and lithium-ion rechargeable batteries. The device delivers up to 300mA output current with efficiencies reaching 93% at 200mA load. Key electrical parameters include a typical quiescent current of 0.6μA entering the VOUT pin and 0.05μA entering the VIN pin. It features a fixed 1.2MHz switching frequency and supports buck mode operation when input exceeds output by 300mV. Operating temperature ranges from -40°C to +85°C.

Bipolar RF Transistors Feature Summary

  • Ultra-low quiescent current design maximizes light-load efficiency and extends battery life
  • Synchronous rectification provides high conversion efficiency and true disconnect in shutdown mode
  • Integrated protection mechanisms include overvoltage protection, thermal shutdown, and short-circuit protection

Bipolar RF Transistors Applications

  • Power supply circuits for devices powered by lithium-manganese batteries
  • Voltage boosting for systems utilizing nickel-metal hydride or lithium-ion rechargeable batteries
  • Battery-operated portable electronics requiring extended standby time

Bipolar RF Transistors Procurement Notes

Verify the exact manufacturer designation, as the source material associates this identifier with the SGM66099 series rather than standard Microsemi nomenclature. Confirm package availability in WLCSP-1.22×0.83-6B or TDFN-2×2-6AL formats. Ensure technical specifications align with the documented 0.9V to 5.2V input range before integration into final designs.

Bipolar RF Transistors Selection Notes

Select this component for applications demanding minimal standby power consumption and high efficiency across varying load conditions. The ability to operate in buck mode when Vin exceeds Vout adds versatility. Ensure the required output voltage falls within the adjustable 2.5V to 5.2V range or matches a fixed version if available. Verify thermal management requirements for the chosen package style under maximum load conditions.

Bipolar RF Transistors Part Context

This component belongs to a class of synchronous boost converters designed for portable battery-powered applications. It addresses the need for efficient voltage regulation in space-constrained environments where low quiescent current is critical for maintaining operational longevity. The technology integrates control logic and power stages into a compact footprint.

Bipolar RF Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other ultra-low IQ synchronous boost converters offering similar 0.9V to 5.2V input ranges and comparable package dimensions if direct replacement is necessary.

6609966099

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