6ED2231S12TXUMA1

$7.61

Description：IC GATE DRVR HALF-BRIDGE 28SOIC
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e9785eaa23a9 Category: Gate Drivers Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

6ED2231S12TXUMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 28SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for 6ED2231S12TXUMA1

Description：IC GATE DRVR HALF-BRIDGE 28SOIC
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Driven Configuration：Half-Bridge
Channel Type：3-Phase
Number of Drivers：6
Gate Type：IGBT, SiC MOSFET
Voltage - Supply：13V ~ 20V
Logic Voltage - VIL, VIH：0.7V, 2.3V
Current - Peak Output (Source, Sink)：350mA, 650mA
Input Type：Non-Inverting
Rise / Fall Time (Typ)：35ns, 20ns
Operating Temperature：-40°C ~ 125°C (TA)
Mounting Type：Surface Mount
Package / Case：28-SOIC (0.295", 7.50mm Width), 24 Leads
Supplier Device Package：PG-DSO-24-21
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：1200 V

Gate Driver datasheet and documents for 6ED2231S12TXUMA1

6ED2231S12TXUMA1

Gate Driver Overview

The Infineon 6ED2231S12TXUMA1 is a three-phase gate driver designed for IGBT and SiC MOSFET applications. It operates at voltages up to 1200 V using Thin-Film-SOI technology. The device provides 0.35 A source and 0.65 A sink currents per channel. It features an integrated bootstrap diode and overcurrent protection (OCP). The component is housed in a 24-pin PG-DSO package.

Gate Driver Feature Summary

Supports high-voltage operation up to 1200 V utilizing Thin-Film-SOI technology
Includes integrated bootstrap diode for simplified circuit design
Provides overcurrent protection functionality for system safety

Gate Driver Applications

Three-phase motor drives
Industrial power supplies
Inverter systems

Gate Driver Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging and temperature ranges. Confirm that the selected variant matches the intended application voltage and current requirements. Cross-reference the datasheet revision date to ensure access to the most recent technical specifications and electrical characteristics before finalizing procurement decisions.

Gate Driver Selection Notes

Select this component for applications requiring robust high-side and low-side driving capabilities for IGBT or SiC devices. Ensure the system design accommodates the specified source and sink currents. Consider the integrated bootstrap diode when designing the auxiliary power supply circuitry. Verify thermal management strategies align with the package's dissipation capabilities under expected load conditions.

Gate Driver Part Context

This part belongs to Infineon's family of high-voltage gate drivers. It utilizes specialized semiconductor technology to handle demanding power switching environments. The integration of protection features reduces external component count. It serves as a critical interface between control logic and power switches in medium to high-power electronic systems.