7140LA35PF8

Overview

The Renesas Electronics Corporation 7140LA35PF8 is an asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 8 kilobits, organized as 1K words by 8 bits. The device features a parallel interface with a maximum access time and write cycle time of 35 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in a 64-pin Thin Quad Flat Package (TQFP). The component is designed for commercial temperature applications ranging from 0°C to 70°C.

Feature Summary

• Supports simultaneous independent read and write operations at two separate ports without bus contention.
• Utilizes CMOS technology to provide high-speed asynchronous data transfer capabilities.
• Features a standard parallel interface architecture compatible with various microprocessor systems.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in industrial control systems
• Data storage in network communication devices

Procurement Notes

Verify the exact package marking and manufacturer date code upon receipt, as this component may be sourced from surplus channels. Confirm that the supplied units match the specified 64-TQFP form factor and electrical characteristics. Ensure compliance with project requirements regarding RoHS status, as older variants may not meet current environmental directives. Validate pin compatibility before integration into existing PCB layouts.

Selection Notes

Select this component when a design requires independent dual-port memory access for concurrent data handling. It is suitable for systems operating on standard 5V logic levels requiring fast asynchronous response times. Consider the 64-TQFP package constraints for board space and thermal management. Evaluate alternative parts if lower power consumption or wider temperature ranges are required for the specific application environment.

Part Context

This part belongs to the IDT 7140LA series of dual-port SRAMs, originally developed by Integrated Device Technology and later acquired by Renesas Electronics. The series is characterized by its ability to facilitate efficient data exchange between different processing domains. The 7140LA35 variant specifically denotes the 35ns speed grade within this family, offering a balance of performance and interface simplicity for legacy and specialized embedded designs.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific component were not identified in the provided documentation. Verify pin-to-pin compatibility and electrical specifications carefully when evaluating generic dual-port SRAM alternatives from other manufacturers.