7164L25YGI8

Description：IC SRAM 64KBIT PARALLEL 28SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:4d29a8d2afc1 Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IC SRAM 64KBIT PARALLEL 28SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Asynchronous
Memory Size：64Kbit
Memory Organization：8K x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：25ns
Voltage - Supply：4.5V ~ 5.5V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package：28-SOJ
Access Time：25 ns

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7164L25YGI8

Overview

The Renesas Electronics Corporation 7164L25YGI8 is a 64 Kbit (8K x 8) BICMOS static random-access memory device. It features a parallel asynchronous interface with a maximum access time of 25 ns. The component operates within a supply voltage range of 4.5 V to 5.5 V and draws a maximum power supply current of 100 mA. Designed for surface-mount installation, it is housed in a 28-pin SOJ package. The device supports an operating temperature range from -40°C to +85°C.

Feature Summary

Utilizes BICMOS technology for high-speed asynchronous data storage
Provides single-data-rate parallel interface capability
Supports industrial-grade wide temperature operation

Applications

High-performance processor secondary cache systems
Industrial control logic buffering
Embedded system data storage

Procurement Notes

Verify the obsolete status and end-of-life notification before procurement planning. Confirm that the 28-pin SOJ package matches the target PCB footprint. Ensure compatibility with the required 4.5 V to 5.5 V power supply rails. Check for moisture sensitivity handling requirements during assembly. Source only from authorized distributors due to limited availability.

Selection Notes

Select this component when a 64 Kbit capacity with 25 ns speed is required in a 28-pin SOJ form factor. Compare against the 7164S25YGI8 variant if different electrical characteristics are needed. Ensure the design accommodates the specific BICMOS power consumption profile. Verify that the parallel interface aligns with the host controller's memory bus architecture.

Part Context

This part belongs to the 7164L series of static RAM devices manufactured by Renesas Electronics. It serves as a legacy solution for applications requiring fast, volatile memory storage in industrial environments. The device represents a transition point in BICMOS SRAM technology, offering performance suitable for older embedded architectures.