71P72804S250BQG

Memory IC Overview

The IDT 71P72804S250BQG is a synchronous QDR II SRAM with an 18 Mbit capacity. It operates at a clock frequency of 250 MHz with a 6.3 ns access time. The device utilizes a parallel interface and is housed in a 165-CABGA package measuring 13x15 mm. It supports high-performance system speeds through zero-dead-cycle read/write transitions.

Memory IC Feature Summary

• Supports high-speed data transfer via QDR II architecture
• Eliminates dead cycles between read and write operations
• Provides pipelined outputs for fully synchronized applications

Memory IC Applications

• High-performance networking equipment
• Telecommunications infrastructure
• Data acquisition systems

Memory IC Procurement Notes

Verify the specific suffix BQG to confirm the 165-CABGA package type and temperature range. Ensure compatibility with 3.3V or 2.5V I/O requirements as specified in the official datasheet. Confirm lead times and authenticity through authorized distributors, as availability may vary by region.

Memory IC Selection Notes

Select this component when zero-dead-cycle performance is critical for system throughput. Compare against standard synchronous SRAMs if bus turnaround latency impacts design efficiency. Verify pinout compatibility with existing PCB layouts due to the specific CABGA footprint dimensions.

Memory IC Part Context

This part belongs to the IDT QDR II SRAM family, designed for applications requiring deterministic latency and high bandwidth. It represents a transition from asynchronous solutions to fully synchronous memory architectures, offering improved timing predictability for complex digital signal processing tasks.

Memory IC Replacement Considerations

Check for direct substitutes within the IDT 71P series with compatible pinouts and electrical characteristics. Verify that alternative packages maintain the same thermal and mechanical constraints for the target application.