71V321L35TF8

Overview

The Renesas Electronics Corporation 71V321L35TF8 is a dual-port static random access memory (SRAM) IC with a storage capacity of 16Kb, organized as 2K x 8. It features an asynchronous parallel interface and supports a supply voltage range of 3V to 3.6V. The component has a maximum access time and write cycle time of 35 ns. It is housed in a 64-TQFP package measuring 10x10 mm and operates within a temperature range of 0°C to 70°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations for both ports.

Applications

• High-speed data buffering in communication systems
• Cache memory applications in embedded processors
• Data acquisition systems requiring fast parallel access

Procurement Notes

Verify the specific suffix 'TF8' indicates tape-and-reel packaging, distinct from the standard tray-packaged 'TF'. Confirm RoHS compliance status as sources indicate non-compliance. Check for end-of-life notifications or product change notices affecting availability. Ensure the selected distributor handles moisture-sensitive level 3 components appropriately.

Selection Notes

Select this part when dual-port functionality is required for concurrent host and peripheral access. Compare against single-port alternatives if only one master is present. Consider the 35 ns speed versus faster variants like the 25 ns version if system timing permits. Verify the 64-TQFP footprint matches the PCB design constraints.

Part Context

This component belongs to the 71V321L series of low-voltage CMOS dual-port SRAMs. It shares architectural similarities with other members like the 71V321L25 but differs in access speed and packaging options. The 'L' suffix typically denotes low-voltage operation around 3.3V.

Replacement Considerations

The 71V321L25TFG is listed as an upgrade alternative by the manufacturer. Verify pin compatibility and electrical specifications before substitution.