71V3556SA100BGG8

Memory IC Overview

The Renesas Electronics Corporation 71V3556SA100BGG8 is a synchronous Zero Bus Turnaround (ZBT) static random-access memory (SRAM) integrated circuit. It features a storage capacity of 4.5 Mbit, organized as 128K words by 36 bits. The device operates with a maximum clock frequency of 100 MHz and provides an access time of 5 ns. It utilizes a parallel interface and requires a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm.

Memory IC Feature Summary

• Zero Bus Turnaround technology eliminates dead cycles between read and write operations.
• Fully pipelined architecture supports four-word burst capabilities for interleaved or linear access.
• Internally synchronized output buffer enable removes the need for external output enable control.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network routers and switches
• Frame buffering in video processing systems

Memory IC Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance requirements as this specific variant may not meet current environmental standards. Validate package integrity upon receipt, as moisture sensitivity level 3 requires strict handling protocols. Ensure design-in compatibility with existing system power supplies and clock frequencies before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when zero bus turnaround latency is critical for system throughput. The 128K x 36 organization suits applications requiring wide data paths without excessive chip count. Consider the 119-pin PBGA package constraints for PCB layout density. Evaluate thermal performance within the specified operating temperature range during system integration planning.

Memory IC Part Context

This part belongs to the 71V3556 family of synchronous ZBT SRAMs manufactured by Renesas Electronics. The family includes variants with different speeds and packages, such as the IDT71V3556S100BG8. These devices are designed to replace asynchronous SRAMs in high-performance systems where bus turnaround time significantly impacts overall efficiency.

Memory IC Replacement Considerations

Public confirmed substitute part numbers: IDT71V3556S100BG8, 71V3556SA100BGI8.