Inverter Gates 7UL1G00NX,ELF product image

7UL1G00NX,ELF

$0.48
  • Description:1 GATE LOGIC, 2-INPUT/NAND, XSON
  • Series:7UL
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:de44b66d0578 Category: Brand:

  
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7UL1G00NX,ELF is listed in the Inverter Gates range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is 1 GATE LOGIC, 2-INPUT/NAND, XSON. Review the specifications below when checking this part for your BOM.

Inverter Gates specifications for 7UL1G00NX,ELF

  • Description:1 GATE LOGIC, 2-INPUT/NAND, XSON
  • Series:7UL
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Logic Type:NAND Gate
  • Number of Circuits:1
  • Number of Inputs:2
  • Features:-
  • Voltage - Supply:0.9V ~ 3.6V
  • Current - Quiescent (Max):1 µA
  • Current - Output High, Low:8mA, 8mA
  • Input Logic Level - Low:0.7V ~ 0.8V
  • Input Logic Level - High:1.7V ~ 2V
  • Max Propagation Delay @ V, Max CL:6.6ns @ 3.3V, 30pF
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-MP6D (1.45x1)
  • Package / Case:6-XFDFN
  • Grade:-
  • Qualification:-

Inverter Gates datasheet and documents for 7UL1G00NX,ELF

7UL1G00NX,ELF

Inverter Gates Overview

The 7UL1G00NX,ELF is a One-Gate Logic (L-MOS) integrated circuit manufactured by Toshiba Semiconductor and Storage. It features a single 2-input NAND gate housed in an XSON-6 package with dimensions of 1.45x1 mm. The device operates within a supply voltage range of 0.9 V to 3.6 V and supports low-level output currents of 8 mA and high-level output currents of -8 mA. It exhibits a propagation delay of 31.8 ns and functions reliably at temperatures ranging from -40°C to +125°C.

Inverter Gates Feature Summary

  • Integrates a single 2-input NAND logic function within a compact L-MOS architecture
  • Operates on ultra-low supply voltages starting from 0.9 V for energy-efficient designs
  • Provides robust drive capability with 8 mA output current sourcing and sinking
  • Encapsulated in a miniature XSON-6 surface-mount package for space-constrained applications

Inverter Gates Applications

  • Portable electronic devices requiring minimal power consumption
  • Battery-operated systems utilizing low-voltage logic interfaces
  • Compact consumer electronics with limited board space
  • Industrial control modules operating in extended temperature environments

Inverter Gates Procurement Notes

Verify the complete part number including the suffix ELF against official Toshiba Semiconductor and Storage documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status directly from the manufacturer's datasheet prior to integration. Cross-reference the XSON-6 footprint dimensions with your PCB layout tools to guarantee accurate mechanical fitment and thermal performance requirements are met.

Inverter Gates Selection Notes

Select this component when designing circuits that require a single NAND gate with low-voltage operation capabilities down to 0.9 V. The XSON-6 package is suitable for applications demanding minimal board area utilization. Ensure the design accommodates the specified 8 mA output drive strength and verify that the operating temperature range aligns with the environmental conditions of the final product assembly.

Inverter Gates Part Context

This component belongs to Toshiba’s 7UL1G series of general-purpose logic ICs based on L-MOS technology. The series focuses on providing basic logic functions in ultra-small packages optimized for modern portable electronics. The 7UL1G00NX variant specifically delivers NAND functionality, complementing other gates like NOR or OR within the same family for flexible system design.

Inverter Gates Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic logic replacements may not match the specific L-MOS voltage characteristics or XSON-6 footprint dimensions.

7UL1G00NX,ELF7UL1G00NX,ELF
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