A2I08H040GNR1

RF FETs, MOSFETs Overview

The A2I08H040GNR1 is an RF LDMOS wideband integrated power amplifier manufactured by NXP USA Inc. It features a dual transistor configuration housed in a TO-270-15 package. The device is rated for a maximum voltage of 65V and operates at a test voltage of 28V. Designed as an asymmetrical Doherty circuit with on-chip matching, it supports frequency ranges from 728 to 960 MHz. The component delivers 9W average output power within this band.

RF FETs, MOSFETs Feature Summary

• Asymmetrical Doherty architecture with integrated on-chip matching
• Dual LDMOS transistor structure for high-power RF amplification
• Wideband operational capability covering 728 to 960 MHz

RF FETs, MOSFETs Applications

• Broadband RF power amplification
• Base station transmitter modules
• Wireless communication infrastructure

RF FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation, as sources list both NXP USA Inc. and Freescale/NXP Semiconductors. Confirm the package variant matches the required TO-270-15 form factor. Check current availability status, as multiple distributors indicate out-of-stock or discontinued conditions. Ensure compliance with RoHS non-compliance and REACH status requirements for your specific manufacturing environment.

RF FETs, MOSFETs Selection Notes

Select this component when a wideband solution between 728 and 960 MHz is required. The integrated matching network simplifies design complexity compared to discrete solutions. Consider the 28V operating voltage and 65V rating for power supply design. Evaluate the TO-270-15 package constraints for thermal management and PCB layout. Verify if the dual LDMOS structure meets the specific power and linearity requirements of the target application.

RF FETs, MOSFETs Part Context

This part belongs to the family of RF LDMOS wideband integrated power amplifiers. It utilizes advanced semiconductor technology to provide efficient amplification in the UHF spectrum. The integration of matching networks reduces external component count. It serves as a critical active element in modern radio frequency systems requiring broad spectral coverage.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. The product is listed as no longer manufactured by NXP USA Inc. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.