A2I20H060NR1

RF FETs, MOSFETs Overview

The A2I20H060NR1 is an RF LDMOS wideband integrated power amplifier designed for cellular base station applications. It utilizes an asymmetrical Doherty architecture with on-chip matching, operating from 1800 to 2200 MHz at 28 Vdc. The device delivers 12 W average output power with a typical power added efficiency of 47.3% and gain of 28.9 dB under single-carrier W-CDMA conditions. It supports modulation formats requiring digital predistortion and features integrated quiescent current temperature compensation.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty configuration
• On-chip input matching with DC blocking
• Integrated quiescent current temperature compensation with enable/disable function

RF FETs, MOSFETs Applications

• Cellular base station transmitters
• Digital predistortion error correction systems
• Single-carrier W-CDMA modulation applications

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R1 against the manufacturer's current catalog to confirm tape and reel specifications. Confirm RoHS compliance status as historical documentation may vary. Ensure the procurement channel provides valid traceability for this discontinued Freescale Semiconductor product line.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring wideband coverage across 1800 to 2200 MHz with high efficiency at power back-off. The integrated thermal tracking simplifies bias circuit design. Verify that the system can accommodate the required gate voltages and that the TO-270WB-15 package fits the thermal management constraints.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF LDMOS wideband integrated power amplifier family originally developed by Freescale Semiconductor. These devices are engineered for high linearity and efficiency in modern wireless infrastructure. The A2I20H060NR1 specifically targets multi-standard base station requirements using advanced silicon LDMOS technology.

RF FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult NXP Semiconductors technical support for legacy replacement guidance or updated portfolio equivalents.