A2I25H060GNR1

RF FETs, MOSFETs Overview

The A2I25H060GNR1 is an RF LDMOS wideband integrated power amplifier manufactured by NXP Semiconductors. It operates within the 2300 MHz to 2690 MHz frequency range, delivering a typical average output power of 8.5 W at 2600 MHz and 8.9 W at 2300 MHz under single-carrier W-CDMA conditions. The device utilizes a Doherty architecture with integrated splitters and combiners, supporting drain voltages from 20 V to 32 V. Key performance metrics include a gain (Gps) exceeding 29 dB and Power Added Efficiency (PAE) ranging from 35% to 37%. It features on-chip matching for 50-ohm input impedance and DC blocking.

RF FETs, MOSFETs Feature Summary

• Integrated Doherty circuit topology with on-chip matching for simplified board design
• Built-in quiescent current temperature compensation with enable/disable functionality
• RF decoupled drain pins to minimize overall footprint requirements

RF FETs, MOSFETs Applications

• Cellular base station infrastructure
• Broadband wireless communication systems
• Multi-standard RF power amplification

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix 'GNR1' against official NXP documentation to confirm package type and reel specifications. Ensure compatibility with RoHS standards as indicated in datasheets. Confirm availability status, as some variants may be discontinued or subject to lifecycle changes. Cross-reference part numbers with authorized distributors to avoid counterfeit components.

RF FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and linearity in the 2.3–2.7 GHz band. The integrated Doherty structure reduces external passive components. Consider thermal management due to power dissipation. Verify supply voltage stability within the 20–32 V range. Ensure the system supports the required control signals for quiescent current adjustment.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast® series of RF LDMOS wideband integrated power amplifiers. It is designed for robust performance in demanding RF environments. The family offers scalability for various base station configurations. Similar parts include the A2I25D080N and A2I35H060N, differing primarily in frequency bands and power levels.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult NXP technical support for direct replacements or pin-compatible alternatives if this specific variant is unavailable.