A2T18S261W12NR3

RF FETs, MOSFETs Overview

The A2T18S261W12NR3 is an N-Channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 1805 to 1880 MHz frequency range and delivers a typical average output power of 56 W at 28 V DC. The device features a drain-source voltage rating of -0.5 to +65 Vdc, a gate-source voltage range of -6.0 to +10 Vdc, and a maximum operating junction temperature of +225 °C. It utilizes the OM-880X-2L2L plastic package.

RF FETs, MOSFETs Feature Summary

• Designed for wide instantaneous bandwidth applications
• Optimized for Doherty amplifier configurations
• Capable of withstanding extremely high output VSWR conditions
• Features an extended negative gate-source voltage range for improved Class C operation

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Wide instantaneous bandwidth systems
• Doherty power amplifier designs

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R3 confirms the tape and reel packaging configuration containing 250 units on a 56 mm tape width and 13-inch reel. Confirm the OM-880X-2L2L plastic package designation matches the required mechanical footprint. Ensure compatibility with the specified thermal resistance and moisture sensitivity level ratings during assembly.

RF FETs, MOSFETs Selection Notes

Select this component when designing amplifiers for the 1805–1880 MHz band requiring 56 W average output power. Consider its optimized performance for Doherty architectures and ability to handle high VSWR loads. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance and maximum operating junction temperature limits.

RF FETs, MOSFETs Part Context

This device belongs to the Airfast RF Power LDMOS Transistor series from NXP Semiconductors. It is specifically engineered for high-performance RF applications in the cellular infrastructure market. The part integrates internal matching on both input and output ports to simplify circuit design.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Do not assume cross-compatibility with other models without verifying electrical parameters and pin configurations.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +225 °C.

Is the device internally matched?

Yes, the device is internally matched on both the input and output ports.

What is the typical gain at 1840 MHz?

The typical power gain (Gps) at 1840 MHz is 18.1 dB under standard test conditions.