A2T21H100-25SR3

RF FETs, MOSFETs Overview

The A2T21H100-25SR3 is an 18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the 2110 to 2170 MHz frequency range and utilizes a 28 Vdc supply voltage. The device features internal matching on both input and output sides, facilitating integration into digital predistortion error correction systems. Typical performance at 2140 MHz includes a power gain of 17.4 dB, drain efficiency of 50.5%, and an adjacent channel power ratio of -35.0 dBc under single-carrier W-CDMA conditions.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Greater negative gate-source voltage range for improved Class C operation
• Designed specifically for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Asymmetrical Doherty power amplifier designs
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R3 indicates tape and reel packaging containing 250 units on a 44 mm tape width with a 13-inch reel. Confirm that the NI-780S-4L4S package designation matches the required physical footprint for your PCB layout. Ensure compatibility with the specified thermal management requirements for case temperatures up to 72°C during operation.

RF FETs, MOSFETs Selection Notes

Select this component when designing asymmetric Doherty architectures requiring integrated input and output matching. The device supports wide instantaneous bandwidths suitable for modern cellular standards. Consider the thermal resistance characteristics and maximum junction temperature limits when determining heat sink requirements for continuous wave operations.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF Power LDMOS Transistor family, which provides high-performance solutions for wireless infrastructure. The A2T21H100 series is optimized for base station power amplification, offering robust load mismatch tolerance and high linearity. It complements other devices in the portfolio by providing specialized configurations for complex modulation schemes.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.