A2T23H160-24SR3

RF FETs, MOSFETs Overview

The A2T23H160-24SR3 is a dual-channel N-channel RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within the 2300 to 2400 MHz frequency range, delivering an average output power of 28 W at a drain voltage of 28 V. The device features a breakdown voltage (Vds) of 65 V and a continuous drain current capability up to 1.2 A. Key electrical parameters include a gain of approximately 17.9 dB and a threshold voltage (Vgs th) of 1.2 V. The component supports gate-source voltages from -6 V to +10 V and functions reliably across a temperature range of -40°C to +150°C.

RF FETs, MOSFETs Feature Summary

• Designed for asymmetrical Doherty amplifier configurations in cellular base stations
• Utilizes Silicon LDMOS technology for high-power RF applications
• Dual-channel configuration optimized for balanced signal processing

RF FETs, MOSFETs Applications

• Cellular base station power amplification
• Asymmetrical Doherty RF power amplifier design
• Broadband wireless communication infrastructure

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP distributors or certified partners. Confirm that the part status is obsolete and assess availability constraints before integration. Ensure compliance with RoHS directives and verify package integrity upon receipt. Cross-reference datasheet revisions to match design requirements precisely.

RF FETs, MOSFETs Selection Notes

Select this component for applications requiring 28 W output power in the 2.3 GHz band. Evaluate thermal management capabilities due to the specified operating temperature limits. Consider the dual-channel architecture for balanced load requirements. Verify compatibility with existing biasing networks given the specific Vgs thresholds.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor series by NXP Semiconductors. It is engineered specifically for high-efficiency power amplification in modern telecommunications infrastructure. The model represents a specialized solution for base station deployments requiring robust performance in the 2300-2400 MHz spectrum.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the part status is listed as obsolete, consult NXP technical support for potential legacy replacements or updated series alternatives.