A3G26D055N-2110

RF FETs, MOSFETs Overview

The A3G26D055N is an 8 W symmetrical Doherty RF power GaN amplifier designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

RF FETs, MOSFETs Feature Summary

• High terminal impedances for optimal broadband performance
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions
• Designed for low complexity analog or digital linearization systems

RF FETs, MOSFETs Applications

• Cellular base station applications
• Massive MIMO active antenna systems for 5G base stations

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging configuration. The standard device is available in a DFN package, while the T4 suffix indicates tape and reel delivery. Confirm that the intended application falls within the guaranteed operational frequency range of 100 to 2690 MHz, as performance guarantees do not extend beyond these limits. Ensure compliance with ESD handling protocols specified in the datasheet prior to assembly.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring symmetrical Doherty architecture with broad bandwidth coverage up to 2690 MHz. It is optimized for massive MIMO active antenna systems in 5G infrastructure. Verify that the system can support the required 48 Vdc operating voltage and that the PCB layout accommodates the DFN 7 x 6.5 mm package dimensions. Consider thermal management requirements based on the specified thermal resistance values for reliable operation under high power conditions.

RF FETs, MOSFETs Part Context

This device belongs to NXP Semiconductors' Airfast series of RF power GaN amplifiers. It is specifically engineered for high-efficiency linear amplification in modern wireless communication infrastructure. The symmetrical Doherty configuration allows for improved efficiency at back-off power levels, which is critical for signals with high peak-to-average power ratios typical in contemporary cellular standards.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.