A3G26D055N-2400

RF FETs, MOSFETs Overview

The A3G26D055N is an 8 W symmetrical Doherty RF power GaN amplifier designed for cellular base stations requiring wide instantaneous bandwidth from 100 to 2690 MHz. It operates at a recommended drain voltage of 48 Vdc with a quiescent current of 40 mA. The device delivers saturated power up to 55 W and maintains high efficiency across the band. It features optimized terminal impedances for broadband performance and supports massive MIMO active antenna systems.

RF FETs, MOSFETs Feature Summary

• Symmetrical Doherty architecture optimized for massive MIMO active antenna systems in 5G base stations
• High terminal impedances enabling optimal broadband performance across 100 to 2690 MHz
• Capable of withstanding extremely high output VSWR and challenging broadband operating conditions
• Designed for compatibility with low complexity analog or digital linearization systems

RF FETs, MOSFETs Applications

• Cellular base station applications requiring very wide instantaneous bandwidth
• Massive MIMO active antenna systems for 5G infrastructure
• Broadband RF power amplification in linearized transmitter chains

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm tape and reel specifications, including unit count and tape width. Ensure the component matches the required package type and moisture sensitivity level for your assembly process. Cross-reference the product marking trace code for lot identification and quality assurance purposes before finalizing procurement orders.

RF FETs, MOSFETs Selection Notes

Select this component when designing for cellular base stations needing wide instantaneous bandwidth coverage between 100 and 2690 MHz. It is suitable for massive MIMO active antenna systems where high output power and ruggedness are critical. Ensure the design accommodates the 48 Vdc operating voltage and specific biasing sequences required for Doherty configurations to achieve optimal linearity and efficiency.

RF FETs, MOSFETs Part Context

This part belongs to NXP Semiconductors' Airfast series of RF power GaN amplifiers. It is specifically engineered for high-power, broadband applications in telecommunications infrastructure. The symmetrical Doherty design allows for efficient power amplification across a wide frequency range, addressing the demands of modern 5G base station architectures.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the datasheet. Consult NXP Semiconductors directly for potential alternative components that meet similar electrical and mechanical specifications.

RF FETs, MOSFETs FAQ

What is the guaranteed frequency range for the A3G26D055N?

Performance is guaranteed for applications operating in the 100 to 2690 MHz band.

What is the recommended operating voltage for this amplifier?

The recommended operating voltage (VDD) is 48 Vdc.

How is the device packaged?

The A3G26D055N is available in a DFN 7 × 6.5 mm package.