A3G26D055N-2600

RF FETs, MOSFETs Overview

The A3G26D055N is an Airfast RF Power GaN Amplifier designed for cellular base station applications requiring wide instantaneous bandwidth from 100 to 2690 MHz. It operates as a symmetrical Doherty amplifier with a recommended drain voltage of 48 Vdc and a maximum drain-source voltage of 125 Vdc. The device delivers 8 W average output power in the 2515–2675 MHz band, achieving up to 54.1% drain efficiency at saturated power. Thermal resistance from channel to case is 8.5 °C/W.

RF FETs, MOSFETs Feature Summary

• High terminal impedances for optimal broadband performance
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions
• Optimized for massive MIMO active antenna systems for 5G base stations

RF FETs, MOSFETs Applications

• Cellular base station applications
• Massive MIMO active antenna systems for 5G base stations
• Low complexity analog or digital linearization systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The standard tape and reel configuration utilizes a T4 suffix indicating 2,500 units per 16 mm tape width on a 13-inch reel. Confirm package type and moisture sensitivity level requirements during the purchasing process to ensure compliance with storage and handling standards.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring symmetrical Doherty architecture within the 100 to 2690 MHz frequency range. Ensure the application supports a 48 Vdc operating voltage and can accommodate the specified thermal characteristics. Verify that the system design accounts for the device's capability to withstand high output VSWR conditions typical in broadband cellular environments.

RF FETs, MOSFETs Part Context

This part belongs to NXP Semiconductors' Airfast series of RF power amplifiers utilizing Gallium Nitride (GaN) technology. The A3G26D055N specifically addresses the needs for wideband coverage in modern wireless infrastructure. It is housed in a DFN 7 x 6.5 mm package suitable for surface mount assembly.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for confirmed substitute part numbers. No direct substitutes are listed in the provided datasheet.

RF FETs, MOSFETs FAQ

What is the guaranteed frequency range for the A3G26D055N?

Performance is guaranteed for applications operating in the 100 to 2690 MHz band.

What is the maximum drain-source voltage rating?

The limiting value for Drain-Source Voltage (VDSS) is 125 Vdc.

How is the device packaged?

The device is available in a DFN 7 x 6.5 mm package.