A3G35H100-04SR3

RF FETs, MOSFETs Overview

The A3G35H100-04SR3 is an asymmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within the 3400 to 3600 MHz frequency range and delivers 14 W average output power at a 48 Vdc drain supply. The device features high terminal impedances for broadband performance and withstands extreme output VSWR conditions.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty configuration
• High terminal impedances optimized for broadband performance
• Robustness against extremely high output VSWR and broadband operating conditions

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Wide instantaneous bandwidth infrastructure systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP channels. Confirm package integrity upon receipt, as the NI-780S-4L housing requires specific handling. Ensure ordering suffix matches R3 specifications for tape and reel quantity. Validate datasheet revision status before finalizing design integration.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring integrated Doherty architectures in the 3400–3600 MHz band. Evaluate thermal management requirements based on the specified junction-to-case resistance values. Ensure bias sequencing protocols are strictly followed to prevent damage during power-up and power-down cycles.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF Power GaN Transistor family. It utilizes Gallium Nitride technology on Silicon Carbide substrates. The device integrates carrier and peaking sections into a single package to simplify amplifier topology and reduce board space requirements for macro remote radio head implementations.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers: None identified.